You will be provided with a reference and some statements. Please determine whether each statement is 'supported', 'unsupported', or 'unknown' with respect to the reference. Please note:
First, assess whether the reference contains any valid content. If the reference contains no valid information, such as a 'page not found' message, then all statements should be considered 'unknown'.
If the reference is valid, for a given statement: if the facts or data it contains can be found entirely or partially within the reference, it is considered 'supported' (data accepts rounding); if all facts and data in the statement cannot be found in the reference, it is considered 'unsupported'.

You should return the result in a JSON list format, where each item in the list contains the statement's index and the judgment result, for example:
[
    {
        "idx": 1,
        "result": "supported"
    },
    {
        "idx": 2,
        "result": "unsupported"
    }
]

Below are the reference and statements:
<reference>
ScienceDirect



Help
There was a problem providing the content you requested
Please
contact our support team
for more information and provide the details below.
Reference number:
a3beaa56aafee74c
IP Address:
208.110.231.2
User Agent:
Mozilla/5.0 (X11; Linux x86_64) AppleWebKit/537.36 (KHTML, like Gecko) HeadlessChrome/153.0.0.0 Safari/537.36
Timestamp:
2026-09-16 08:57:44 UTC
CPE00001
::CLOUDFLARE_ERROR_1000S_BOX::
About ScienceDirect
Remote access
Contact and support
Terms and conditions
Privacy policy
Cookie settings
All content on this site: Copyright © 2026 Elsevier B.V., its licensors, and contributors. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For all open access content, the relevant licensing terms apply.
</reference>

<statements>
1. Fluorocarbon plasmas (CF₄, CHF₃, C₄F₈) generate LiF, which is involatile and accumulates on the surface and sidewalls, lowering etch rate and roughening profiles, so simply running “harder” often increases damage rather than depth. Ar‑based ICP‑RIE processes avoid LiF formation by relying on physical sputtering; with optimized pressure, low bias, and a post‑wet cleaning step they can produce smooth, vertical sidewalls while minimizing chemical damage. Directional atomic layer etching (ALE) using HBr/BCl₃ for modification followed by a low‑power Ar plasma for removal improves volatility of etch products relative to F‑ and Cl‑based plasmas, reducing surface roughening and premature etch termination and thus limiting damage per cycle.
</statements>

Begin the assessment now. Output only the JSON list, without any conversational text or explanations.